Innovative Photoelectrode Technology for Enhanced Solar Energy Conversion

Introduction

As the demand for clean, renewable energy continues to grow, optimizing the efficiency of solar energy conversion systems is becoming increasingly important. Traditional solar technologies face limitations in energy conversion rates and scalability, requiring innovative solutions that push the boundaries of material science. Our patented photoelectrode technology offers an advanced solution for improving solar energy capture, conversion, and storage, making it a valuable asset for companies invested in renewable energy and sustainable power systems.

Challenges in Current Solar Energy Technologies

Solar energy is one of the most promising sources of renewable energy, but current photovoltaic and solar cell technologies often suffer from inefficiencies in energy conversion. Traditional materials used in these devices have limitations in terms of durability, energy absorption, and conversion rates. This leads to suboptimal performance and higher costs for large-scale solar energy installations. The challenge is to develop materials that not only capture more sunlight but also convert it more efficiently into usable energy, while remaining scalable and cost-effective.

For companies operating in the renewable energy sector, the ability to improve solar energy technologies without a dramatic increase in production costs is essential for meeting market demand and environmental goals.

A New Approach with Advanced Photoelectrodes

Our patented photoelectrode technology introduces a new class of materials that significantly enhance the efficiency of solar energy conversion. These photoelectrodes are designed with advanced materials that offer superior light absorption and charge separation properties, making them ideal for solar cells and other photoactive devices. The unique method of manufacturing these photoelectrodes allows for improved scalability and durability, reducing production costs while maintaining high performance.

This technology is not limited to just solar energy applications. It can be applied in areas such as photoelectrochemical water splitting, photodetectors, and other energy-harvesting devices. By improving the overall efficiency of light-driven processes, this innovation opens up new possibilities for creating more reliable and cost-effective solar power systems.

Key Benefits

Enhanced Energy Conversion: Improves the efficiency of solar energy conversion, increasing the overall output of solar cells and energy systems.
Durable and Scalable: The materials and methods used in this technology ensure long-term performance and scalability for large-scale applications.
Broad Application Potential: Useful not only in solar energy but also in photodetectors and other photoactive systems.
Cost-Effective Manufacturing: The method of making these photoelectrodes reduces production costs, making solar technologies more accessible.

A Leap Forward in Solar Energy Efficiency

Licensing this photoelectrode technology provides companies in the renewable energy sector with a powerful tool to improve solar energy capture and conversion. With its ability to enhance efficiency and reduce costs, this technology is poised to play a key role in advancing the global shift toward sustainable and clean energy solutions.

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Abstract
Claims

Disclosed herein are photoelectrodes and methods of making and use thereof. For example, disclosed herein are photo-electrodes comprising: a light absorbing layer; an insulator layer disposed on the light absorbing layer, wherein the insulator layer has an average thickness of 20 nanometers (nm) or more; and a set of protrusions, wherein each protrusion penetrates through the insulator layer to the light absorbing layer, such that each protrusion is in physical and electrical contact with the light absorbing layer; and a plurality of particles disposed on the insulator layer, wherein a least a portion of the plurality of particles are in physical and electrical contact with at least a portion of the set of protrusions; and wherein the plurality of particles and optionally the set of protrusions comprise a catalyst material.

1. A photoelectrode comprising:

a light absorbing layer;

an insulator layer disposed on the light absorbing layer, wherein the insulator layer has an average thickness of 20 nanometers (nm) or more;

a set of protrusions, wherein each protrusion penetrates through the insulator layer to the light absorbing layer, such that each protrusion is in physical and electrical contact with the light absorbing layer; and

a plurality of particles disposed on the insulator layer, wherein a least a portion of the plurality of particles are in physical and electrical contact with at least a portion of the set of protrusions;

wherein the plurality of particles and optionally the set of protrusions comprise a catalyst material.

2. The photoelectrode of claim 1, wherein the light absorbing layer comprises silicon, gallium arsenide, AlGaAs, InP, InGaP, InAlP, AlP, InGaAsN, InGaAs, GaN, InGaN, AlInGaN, AlGaN, SiGe, SiC, CdTe, CdSe, ZnO, ZnSe, ZnTe, CdZnTe, SnS₂, Zn₃P₂, ZnP₂, Zn₃As₂, TiO₂, hybrid organic-inorganic perovskite compounds, copper oxides, SrTiO₃, MoS₂, GaSe, SnS, CuInGaSe₂, a-Si:H (hydrogenated amorphous silicon), bismuth vanadate (BiVO₄), iron oxide (Fe₂O₃), or a combination thereof.

3. The photoelectrode of claim 1, wherein the light absorbing layer comprises silicon.

4. The photoelectrode of claim 1, wherein the light absorbing layer has an average thickness of from 100 nanometers (nm) to 500 micrometers (microns, μm).

5. The photoelectrode of claim 1, wherein the light absorbing layer further comprises a doped layer having an average thickness of from 10 nm to 500 μm.

6. (canceled)

7. (canceled)

8. (canceled)

9. (canceled)

10. The photoelectrode of claim 1, wherein the light absorbing layer comprises Si with a buried pn junction.

11. The photoelectrode of claim 1, wherein the insulator layer comprises SiO₂, TiO₂, silicon nitride, silicon oxynitride, aluminum oxide, strontium titanate, tungsten oxide (WO₃), aluminum nitride, boron nitride, aluminum gallium nitride, or a combination thereof.

12. The photoelectrode of claim 1, wherein the insulator layer comprises SiO₂.

13. The photoelectrode of claim 1, wherein the insulator layer has an average thickness of 50 nm or more.

14. The photoelectrode of claim 1, wherein the catalyst material comprises a metal selected from the group consisting of Ni, Pt, Mo, Co, Ru, Ir, or a combination thereof.

15. The photoelectrode of claim 1, wherein the catalyst material comprises Ni.

16. The photoelectrode of claim 1, wherein the catalyst material comprises an oxygen evolution reaction catalyst.

17. The photoelectrode of claim 1, wherein each of the protrusions in the set of protrusions has an average characteristic dimension of from 0.1 nm to 1 μm.

18. (canceled)

19. The photoelectrode of claim 1, wherein each of the protrusions in the set of protrusions has an average characteristic dimension that varies with the thickness of the insulator layer.

20. (canceled)

21. The photoelectrode of claim 1, wherein the set of protrusions are dispersed across the insulator layer laterally such that the set of protrusions within the insulator layer have an areal density of from 10⁴to 10¹³protrusions per cm²of the insulator layer.

22. The photoelectrode of claim 1, wherein the set of protrusions are dispersed throughout the insulator layer such that the set of protrusions within the insulator layer have an areal density of from 2×10⁸to 8×10⁸protrusions per cm²of the insulator layer.

23. The photoelectrode of claim 1, wherein the plurality of particles have an average particle size of from 5 nm to 50 μm.

24. (canceled)

25. (canceled)

26. The photoelectrode of claim 1, wherein the plurality of particles and/or the set of protrusions cover from 5% to 80% of a top surface of the insulator layer.

27. (canceled)

28. (canceled)

29. A method of making a photoelectrode, the method comprising:

forming an insulator layer on a light absorbing layer, wherein the insulator layer has an average thickness of 20 nm or more;

depositing a reactive layer comprising a reactive material on the insulator layer, such that the insulator layer is disposed between the light absorbing layer and the reactive layer, thereby forming a precursor electrode;

annealing the precursor electrode such that the reactive material reacts with and diffuses through the insulator layer, thereby forming a set of spikes comprising the reactive material, wherein each of the set of spikes penetrates through the insulator layer to the light absorbing layer, such that each of the set of spikes is in physical and electrical contact with the light absorbing layer, thereby forming a spiked electrode; and

subsequently depositing a catalyst material;

thereby forming a photoelectrode comprising:

the insulator layer disposed on the light absorbing layer,

a set of protrusions that penetrates through the insulator layer to the light absorbing layer, such that each of the set of protrusions is in physical and electrical contact with the light absorbing layer, and

wherein the plurality of particles and optionally the set of protrusions comprise a catalyst material.

30–81. (canceled)

82. A device comprising the photoelectrode of claim 1.

83. (canceled)

84. (canceled)

Title

Photoelectrodes and methods of making and use thereof

Inventor(s)

Edward T. Yu, Soonil LeeLi Ji

Assignee(s)

University of Texas System

Patent #

20240194802

Patent Date

June 13, 2024